JUNE 8-13, 2014 • DENVER, COLORADO
159
TECHNICAL PROGRAM
(846-H22)
Ingots Pulled with Electron Beam Heating from
Skull - a New Feedstock for FZ Crystals Applicable for
Solar Cells.
Anatoly Kravtsov.
SIA ‘’KEPP EU’’, Riga, Latvia.
(847-H26)
Analysis of Emitter Performance contacted with
Silicide induced Dopant Segregation.
Markus Lenz, Joachim
Knoch.
RWTH Aachen University, Institute of Semiconductor
Electronics, Aachen, Germany.
(848-H30)
Double Shottcky of NiOx/Graphene/Si for
Enhance Efficiency Solar Cells.
M. Mohammed
1,3
, T. Chen
2
.
1
Department of Applied Science, Unversity of Arkansas at Little
Rock and Green Solar Cell Research, Little Rock, AR, USA,
2
Department of Physics and Astronomy, Unversity of Arkansas
at Little Rock and Green Solar Cell Research, Little Rock,
AR, USA,
3
College of Science, University of Al-Qadisiyah, Al-
Qadisiyah, Iraq.
(849-H34)
Elucidating and Engineering Recombination-
Active Metal-Rich Precipitates in n-type Multicrystalline
Silicon.
Ashley E. Morishige
1
, David P. Fenning
1
, Jasmin
Hofstetter
1
, Mallory Ann Jensen
1
, Saptharishi Ramanathan
2
,
Chenlei Wang
2
, Barry Lai
3
, Tonio Buonassisi
1
.
1
Massachusetts
Institute of Technology, Cambridge, MA, USA,
2
Sunpreme,
Sunnyvale, CA, USA,
3
Advanced Photon Source, Argonne
National Laboratory, Argonne, IL, USA.
(850-H38)
Analysis of Different Models of Iron Precipitation
in Multicrystalline Silicon.
Ashley E. Morishige
1
, Hannu S.
Laine
2
, Jonas Schön
3
, Jasmin Hofstetter
1
, Antti Haarahiltunen
2
,
Martin Schubert
3
, Hele Savin
2
, Tonio Buonassisi
1
.
1
Massachusetts Institute of Technology, Cambridge, MA, USA,
2
Aalto University, Department of Micro and Nanosciences,
Espoo, Finland,
3
Fraunhofer Institute for Solar Energy Systems,
Freiburg, Germany.
(851-I2)
POCl3 diffusion process optimization for the
formation of emitters in the crystalline silicon solar cells.
Karthick Murukesan
1,2
, Sandeep kumbhar
2
, Ashok Kapoor
3
,
Anuradha Dhaul
3
, Saravanan S
2
, Richard Pinto
1,2
, Arora Brij
Mohan
1,2
.
1
Indian Institute of Technology, Powai, Mumbai
400076, India,
2
National Center for Photovoltaic Research and
Education,Powai, Mumbai 400076, India,
3
Solid State Physics
Laboratory, Lucknow Road, Delhi 110054, India.
(852-I6)
Sacrificial High-Temperature Phosphorus
Diffusion Gettering Process for Lifetime Improvement
of Multi-Crystalline Silicon Wafers.
Stephanie M. Scott,
Jasmin Hofstetter, Ashley E. Morishige, Tonio Buonassisi.
Massachusetts Institute of Technology, Cambridge, MA, USA.
(853-I10)
Improvement of Annealing Procedure to
Suppress Defect Generation during Impurity Gettering
in Multicrystalline Silicon for Solar Cells.
Isao Takahashi
1
,
Supawan Joonwichien
1
, Kentaro Kutsukake
2
, Satoru
Matsushima
1
, Ichiro Yonenaga
2
, Noritaka Usami
1
.
1
Graduate
School of Engineering Nagoya University, Nagoya, Japan,
2
Institute for Materials Research Tohoku University, Sendai,
Japan.
(854-I14)
Silicon Solar Cell Voltage Increase Based on
Limited Area Junction.
Peinan Teng
1
, Xinrui An
1
, Alexander
To
1
, Hamid Mehrvarz
1
, Thorsten Trupke
1,2
, Allen Barnett
1
.
1
University of New South Wales, Sydney, Australia,
2
BT
Imaging, Sydney, Australia.
(855-I18)
The influence of phosphorus diffusion gettering
in interdigitated back contact solar cells.
Yun-Kuo Tsao
1
,
Richard Pai
2
.
1
Motech Industries, Inc. Sicence Park Branch,
Tainan, Taiwan,
2
Motech Industries, Inc. Sicence Park Branch,
Tainan, Taiwan.
