158
40th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
TECHNICAL PROGRAM
(835-G18)
Analysis of the topography and the sub-surface
damage of Cz- and mc-silicon wafers sawn with diamond
wire.
Rajko Buchwald, Sindy Würzner, Marcel Fuchs, Stefan
Retsch, Kilian Fröhlich, Toni Lehmann, Hans Joachim Möller.
Fraunhofer Technologiezentrum Halbleitermaterialien THM,
Freiberg, Germany.
(836-G22)
Predicting Dislocation Recombination Strength in
Multicrystalline Silicon using Etch-Pit Geometry Variation.
Sergio Castellanos
1
, Jasmin Hofstetter
1
, Maulid Kivambe
1
,
Markus Rinio
2
, Tonio Buonassisi
1
.
1
Massachusetts Institute of
Technology, Cambridge, MA, USA,
2
Karlstad University, Karlstad,
Sweden.
(837-G26)
Investigation of Electrical Properties on Industrial
PERC Mono-like Si Solar cell.
Yu-Hsuan Chang, Shang-Jue Su,
Po-Sheng Huang, Li-Wei Cheng.
No. 1560, Sec. 1, Zhongshan
Rd., Guanyin Township, Taoyuan County, Taiwan.
(838-G30)
Investigation of Cooling Effect on the formation of
Al-p+ emitter For N-type Silicon Solar Cell.
Tseng-Jung Chang,
Sean H.T. Chen, Chia-Yu Shen, Shao-Peng Su, Li-Wei Cheng.
Topcell solar international CO., LTD, Taoyuan County, Taiwan.
(839-G34)
Comparison of POCl3 Diffusion with Phosphorus
Ion Implantation for Czochralski and Quasi-mono Silicon
Solar Cells.
Eunhwan Cho, Youngwoo Ok, Kyungsun Ryu,
Brian Rounsaville, Ajay D. Upadhyaya, Vijaykumar Upadhyaya,
Ajeet Rohatgi.
University Center of Excellence for Photovoltaic
Research and Education, Georgia Institute of Technology,
Atlanta, GA, USA.
(840-G38)
Cold-Container Crystal Growth of “Last-to-
Freeze” Silicon Samples, for Enhanced Detection of Metallic
Impurities by ICP-MS.
T. F. Ciszek
1
, H. E. Gotts
2
.
1
Siliconsultant
Division of Geolite, Evergreen, CO, USA,
2
Air Liquide Electronics
U. S. LP – Balazs NanoAnalysis, Fremont, CA, USA.
(841-H2)
Residual Dopant Levels in Silicon Feedstock Grown
by Pilot-Scale Atmospheric Pressure Iodine Vapor Transport.
T.F. Ciszek.
Siliconsultant Division of Geolite, Evergreen, CO,
USA.
(842-H6)
High Efficiency Solar Cells on Direct Kerfless
156 mm Mono Crystalline Si Wafers by High Throughput
Epitaxial Growth.
Ruiying Hao
1
, T.S. Ravi
1
, V. Siva
1
, Jean Vatus
1
,
Dan Miller
1
, Joel Custodio
1
, Ken Moyers
1
, Chia-Wei Chen
2
, Ajay
Upadhyaya
2
, Ajeet Rohatgi
2,3
.
1
Crystal Solar Inc., Santa Clara,
CA, USA,
2
Georgia Institute of Technology, Atlanta, GA, USA,
3
Suniva Inc., Norcross, GA, USA.
(843-H10)
High-Throughput Si Foil Technologies at
Fraunhofer ISE.
Stefan Janz, Marion Drießen, Nena Milenkovic,
Martin Keller, Elke Gust, Stefan Reber.
Fraunhofer ISE, Freiburg,
Germany.
(844-H14)
High quality multicrystalline silicon wafer by grain
size control on directional growth method.
Ho Kai-An, Chou
Jian-Kang, Tzeng Shi-Kai, Liao Lung-Sheng, Yang Chen-Hao,
Wu Jui-Pin, Wu Yu-Hao, Chen Yu-Chung.
Motech Industries Inc.,
Tainan, Taiwan.
(845-H18)
>1.8 Millisecond Effective Lifetime in n-type Silicon
Grown by the Noncontact Crucible Method.
Maulid Kivambe
1
,
Douglas M. Powell
1
, Mallory Ann Jensen
1
, Ashley E Morishige
1
,
Kazuo Nakajima
2
, Ryota Murai
2
, Kohei Morishita
2
, Tonio
Buonassisi
1
.
1
Massachusetts Institute of Technology, Cambridge,
MA, USA,
2
Graduate School of Energy Science, Kyoto University,
Kyoto, Japan
