JUNE 16-21, 2013 • TAMPA, FLORIDA
81
Area 5 - Orals
1:30 - 3:00
PM
MR 22
Film Crystalline Silicon
Chair: Ivan Gordon, Franz-Josef Haug
1:30
(27)
Improved 750 °C Epitaxial Crystal Silicon
Solar Cells Through Impurity Reduction.
Sachit
Grover, David L. Young, Vincenzo LaSalvia, Jian V.
Li, Howard M. Branz, Pauls Stradins, Charles W.
Teplin
National Renewable Energy Lab., Golden, CO, USA
1:45
(28) 600
mV Epitaxial Crystal Silicon Solar
Cells Grown On Seeded Glass
David L. Young
1
,
Charles W. Teplin
1
,
Sachit
Grover
1
,
Benjamin Lee
1
,
Jihun Oh
1
,
Vincenzo
Lasalvia
1
,
Daniel Amkreutz
2
,
Stefan Gall
2
,
Monica Chahal
3
,
Greg J. Couillard
4
,
Ta-Ko
Chuang
4
,
Josefine Selj
5
,
Michael Deceglie
6
,
Harry
Atwater
6
,
Howard M. Branz
1
,
Pauls Stradins
1.
1
NREL, Golden, CO, USA,
2
Hamberg University
of Technology, Hamburg, Germany,
3
Columbia
University, New York, NY, USA,
4
Corning
Inc, Corning, NY, USA,
5
Institute for Energy
Technology, Kjeller, Norway,
6
California Institute of
Technology, Pasadena, CA, USA
2:15
Best Student Presentation Award Finalist
(29)
Improving the Quality of Epitaxial Foils
Produced using a Porous Silicon-based Layer
Transfer Process for High Efficiency Thin-Film
Crystalline Silicon Solar Cells.
Hariharsudan
Sivaramakrishnan Rad
1,2
,
Roberto Martini
1,2
,
Kris Van Nieuwenhuysen
1
,
Valérie Depauw
1
,
Maarten Debucquoy
1
,
Jonathan Govaerts
1
,
Ivan
Gordon
1
,
Robert Mertens
1,2
,
Jef Poortmans
1,2.
1
IMEC, Leuven, Belgium,
2
Department of Electrical
Engineering, KU Leuven, Leuven, Belgium
2:30
(30)
Enhancement of Gettering in Epitaxial
Thin-Film Silicon Solar Cells by Tuning the
Properties of Porous Silicon
Hariharsudan Sivaramakrishnan Rad
1,2
,
Chihak
Ahn
3
,
Kris Van Nieuwenhuysen
1
,
Nick Cowern
3
,
Ivan Gordon
1
,
Robert Mertens
1,2
,
Jef Poortmans
1,2
.
1
IMEC, Leuven, Belgium,
2
Department of Electrical
Engineering, KU Leuven, Leuven, Belgium,
3
School of Electrical and Electronic Engineering,
Newcastle University, Newcastle Upon Tyne, UK
2:45
(31)
Epitaxial Wafer Equivalent Solar Cells with
Overgrown SiO
2
Layer and Varying Doping
Profile to Reduce the Influence of Defects
Marion Drießen, Stefan Reber
Fraunhofer ISE, Freiburg, Germany
TECHNICAL PROGRAM
