56
40th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
2:45
(26) Fabrication and Optoelectronic Properties of
CZTSe Single Crystals
Douglas M. Bishop
1
, Brian E. McCandless
1
, Richard
Haight
2
, Robert Birkmire
1
1
Institute of Energy Conversion, University of
Delaware, Newark, DE, USA,
2
IBM T. J. Watson
Research Center, Yorktown Hts, NY, USA
3:15
(27) Vibrational and Structural Properties of
Cu
2
ZnSn(S
x
Se
1-x
)
4
(0 ≤
x
≤ 1) Solid Solutions
Mirjana Dimitrievska
1
, Galina Gurieva
2
, Haibing Xie
1
,
Xavier Fontané
1
, Andrew Fairbrother
1
, Rene Günder
2
,
Edgardo Saucedo
1
, Alejandro Pérez-Rodríguez
1, 3
,
Victor Izquierdo-Roca
1
, Susan Schorr
2, 4
1
IREC, Barcelona, Spain,
2
HZB, Berlin, Germany,
3
IN2UB, Barcelona, Spain,
4
FUB, Berlin, Germany
Area 4 - Orals
2:00 - 3:30 PM
Ballroom 1EF
Material Characterization
Chair(s): Tonio Buonassisi, Kyotaro Nakamura
2:00
(28) Photoluminescence Spectroscopy and
Topography of Defects in Photovoltaic Silicon
Michio Tajima
1,2
1
Institute of Space and Astronautical Science/JAXA,
Sagamihara, Japan,
2
Meiji University, Kawasaki, Japan
2:30
(29) Recombination via Nano-precipitates … a
New Mechanism for Efficiency Loss in Solar
Silicon?
Anthony R Peaker
1
, Bruce Hamilton
1
, Simon
Leonard
1
, Vladimir P Markevich
1
, Khaled Youssef
2
,
George Rozgonyi
2
1
Photon Science Institute, The University of
Manchester, Manchester, UK,
2
North Carolina State
University, Materials Science, Raleigh, NC, USA
2:45
(30) Temperature Dependence of Band-Band
Absorption and Radiative Recombination
in Crystalline Silicon from Spectral
Photoluminescence
Hieu T. Nguyen, Fiacre E. Rougieux, Simeon C.
Baker-Finch, Daniel Macdonald
Research School of Engineering, College of
Engineering and Computer Science, The Australian
National University, Canberra, Australia
3:00
(31) Grain boundary characterization in
multicrystalline silicon using joint EBSD, EBIC,
and atom probe tomography
Andreas Stoffers
1
, Oana Cojocaru-Mirédin
1
, Otwin
Breitenstein
2
, Winfried Seifert
3,4
, Stefan Zaefferer
1
,
Dierk Raabe
1
1
Max-Planck-Institut für Eisenforschung,
Düsseldorf, Germany,
2
Max-Planck-Institut
für Mikrostrukturphysik, Halle, Germany,
3
Brandenburgische Technische Universität, Cottbus,
Germany,
4
IHP, Frankfurt (Oder), Germany
3:15
(32) Quantification of Iron Redistribution
between Acceptors in co-doped Silicon
T Bartel
1
, F Gibaja
1
, M Kaes
1
, A Turenne
2
1
Calisolar GmbH, Berlin, Germany,
2
Silicor Materials
Inc, San Jose, CA, USA
TECHNICAL PROGRAM
