34
40th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
TECHNICAL AREA OVERVIEWS
AREA 5 OVERVIEW
THIN FILM SILICON BASED PV
TECHNOLOGIES
Chair: Franz-Josef Haug, Ecole
Polytechnique Fédérale de Lausanne
(EPFL), Switzerland
Co- Chair(s):
Ivan Gordon, IMEC, Belgium
Hitoshi Sai, AIST, Japan
Area 5 Description
Thin film silicon covers a class of materials that ranges from
amorphous silicon and its group-IV alloys, over nano- and
microcrystalline silicon, silicon-oxides and -carbides, to
thin films of crystalline silicon. Research and development
in this active area addresses fundamental concepts of
material quality, recent insight into light induced degradation,
and passivation of internal interfaces and heterojunctions.
This area will also be a forum to discuss innovative cell
architectures with multiple junctions and the application of
mature concepts in large area industrial production.
Sub-Area Chairs
Hitoshi Sai (AIST, Japan), Nikolas Podraza (University
of Toledo, USA), Ivan Gordon (IMEC, Belgium), Sergey
Varlamov (UNSW Sydney, Australia), Matthias Meier (Jülich
Research Centre, Germany), Franz-Josef Haug (EPFL,
Switzerland), Bernd Stannowski (Helmholtz Zentrum Berlin,
Germany), Baojie Yan (formerly UniSolar, USA)
